document number: 83654 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 1 optocoupler, phototransistor output (dual, quad channel) ild621/ild621gb/ilq621/ilq621gb vishay semiconductors description the ild621/ilq621 and ild621gb/ilq621gb are multi-channel phototransisto r optocouplers that use gaas irled emitters and high gain np n silicon phototransistors. these devices are constructed using double molded insulation technology. this assembly process offers a withstand test voltage of 7500 vdc. the ild621/ilq621gb is well suited for cmos interfacing given the ctr cesat of 30 % minimum at i f of 1.0 ma. high gain linear operation is guaranteed by a minimum ctr ce of 100 % at 5.0 ma. the ild/ q621 has a guaranteed ctr ce 50 % minimum at 5.0 ma. the transparent ion shield insures stable dc gain in applications such as power supply feedback circuits, where constant dc v io voltages are present. features ? alternate source to tlp621-2/-4 and tlp621gb-2/-4 ? high collector emitter voltage, bv ceo = 70 v ? dual and quad packages feature: - lower pin and parts count - better channel to channel ctr match - improved common mode rejection ? isolation test voltage, 5300 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 ? bsi iec 60950; iec 60065 ?fimko i179054 1 2 3 4 8 7 6 5 e c c e a c c a a c c a a c c a e c c e e c c e 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 dual channel quad channel order information part remarks ild621 ctr > 50 %, dual, dip-8 ild621gb ctr > 100 %, dual, dip-8 ilq621 ctr > 50 %, quad, dip-16 ilq621gb ctr > 100 %, quad, dip-16 ild621-x006 ctr > 50 %, dual, dip-8 400 mil
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83654 2 rev. 1.5, 20-dec-07 ild621/ild621gb/ilq621/ilq621gb vishay semiconductors optocoupler, phototransistor output (dual, quad channel) note for additional information on the availabl e options refer to option information. notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). ild621-x007 ctr > 50 %, dual, smd-8 (option 7) ild621-x009 ctr > 50 %, dual, smd-8 (option 9) ild621gb-x007 ctr > 100 %, dual, smd-8 (option 7) ilq621-x006 ctr > 50 %, quad, dip-16 400 mil ilq621-x007 ctr > 50 %, quad, smd-16 (option 7) ilq621-x009 ctr > 50 %, quad, smd-16 (option 9) ilq621gb-x006 ctr > 100 %, quad, dip-16 400 mil ilq621gb-x007 ctr > 100 %, quad, smd-16 (option 7) ilq621gb-x009 ctr > 100 %, quad, smd-16 (option 9) order information part remarks absolute maximum ratings (1) parameter test condition part symbol value unit input reverse voltage v r 6.0 v forward current i f 60 ma surge current i fsm 1.5 a power dissipation p diss 100 mw derate from 25 c 1.33 mw/c output collector emitter reverse voltage v eco 70 v collector current i c 50 ma t < 1.0 ms i c 100 ma power dissipation p diss 150 mw derate from 25 c - 2.0 mw/c coupler isolation test voltage t = 1.0 s v iso 5300 v rms package dissipation ild621 400 mw ild621gb 400 mw derate from 25 c 5.33 mw/c package dissipation ilq621 500 mw ilq621gb 500 mw derate from 25 c 6.67 mw/c creepage distance 7.0 mm clearance distance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature (2) 2.0 mm from case bottom t sld 260 c
document number: 83654 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 3 ild621/ild621gb/ilq621/ilq621gb optocoupler, phototransistor output (dual, quad channel) vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.01.151.3 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 40 pf thermal resistance, junction to lead r thjl 750 k/w output collector emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 6.8 pf collector emitter leakage current v ce = 24 v i ceo 10 100 na i ceo 20 50 a thermal resistance, junction to lead r thjl 500 k/w coupler capacitance (input to output) v io = 0 v, f = 1.0 mhz c io 0.8 pf insulation resistance v io = 500 v 10 12 channel to channel insulation 500 vac collector emitter saturation voltage i f = 8.0 ma, i ce = 2.4 ma ild621 v cesat 0.4 v ilq621 i f = 1.0 ma, i ce = 0.2 ma ild621gb v cesat 0.4 v ilq621gb current transfer ratio parameter test condition part symbol min. typ. max. unit channel/channel ctr match i f = 5.0 ma, v ce = 5.0 v ctrx/ ctry 1 to 1 3 to 1 % current transfer ratio (collector emitter saturated) i f = 1.0 ma, v ce = 0.4 v ild621 ctr cesat 60 % ilq621 ctr cesat 60 % ild621gb ctr cesat 30 % ilq621gb ctr cesat 30 % current transfer ratio (collector emitter) i f = 5.0 ma, v ce = 5.0 v ild621 ctr ce 50 80 600 % ilq621 ctr ce 50 80 600 % ild621gb ctr ce 100 200 600 % ilq621gb ctr ce 100 200 600 % switching characteristics parameter test condition symbol min. typ. max. unit non-saturated on time i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t r 2.0 s off time i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t f 2.0 s propagation h to l i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t phl 1.1 s propagation l to h i f = 10 ma, v cc = 5.0 v, r l = 75 , 50 % of v pp t plh 2.5 s
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83654 4 rev. 1.5, 20-dec-07 ild621/ild621gb/ilq621/ilq621gb vishay semiconductors optocoupler, phototransistor output (dual, quad channel) typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - non-saturated switching timing fig. 2 - non-saturated switching timing fig. 3 - saturated switching timing fig. 4 - saturated switching timing saturated on time i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t on 4.3 s rise time i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t r 2.8 s off time i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t off 2.5 s fall time i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t f 11 s propagation h to l i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t phl 2.6 s propagation l to h i f = 10 ma, v cc = 5.0 v, r l = 1 k , v th = 1.5 v t plh 7.2 s switching characteristics parameter test condition symbol min. typ. max. unit common mode transient immunity parameter test condition symbol min. typ. max. unit common mode rejection, output high v cm = 50 v p-p , r l = 1.0 k , i f = 0 ma cm h 5000 v/s common mode rejection, output low v cm = 50 v p-p , r l = 1.0 k , i f = 10 ma cm l 5000 v/s iild621_01 t r t f t d 50 % t plh v o i f t plh t s iild621_02 v o v cc = 5 v r l = 75 f = 10 khz, df = 50 % i f = 10 ma iild621_03 i f t r v o t d t s t f t phl t plh v th = 1.5 v iild621_04 v o v cc = 5 v r l f = 10 khz, df = 50 %
document number: 83654 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 5 ild621/ild621gb/ilq621/ilq621gb optocoupler, phototransistor output (dual, quad channel) vishay semiconductors fig. 5 - maximum led current vs. ambient temperature fig. 6 - maximum led power dissipation fig. 7 - forward voltage vs. forward current fig. 8 - collector emitter current vs. temperature and led current fig. 9 - collector emitter leakage vs. temperature fig. 10 - propagation delay vs. collector load resistor - 60 - 40 - 20 0 20 40 60 8 0 100 120 100 8 0 60 40 0 20 t am b - am b ient temperat u re (c) i f - maxim u m led c u rrrent (ma) t j (max.) = 100 c iild621_05 iild621_06 - 60 - 40 - 20 20 40 60 8 0 100 200 100 0 50 t am b - am b ient temperat u re (c) p led - led po w er (m w ) 150 0 iild621_07 i f - for w ard c u rrent (ma) 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1. 3 1.4 v f - for w ard v oltage ( v ) t a = 8 5 c t a = 8 5 c t a = 8 5 c iild621_0 8 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c 40 iild621_09 100 8 0 60 40 20 0 - 20 10 10 10 10 10 10 10 10 - 2 - 1 0 1 2 3 4 5 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) v ce = 10 v typical iild621_10 r l - collector load resistor (k ) 100 10 1 0.1 1 10 100 1000 1.0 1.5 2.0 2.5 t plh t plh - propagation lo w -high ( s) t phl - propagation high-lo w ( s) i f = 10 ma v cc = 5 v , v th = 1.5 v t phl
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83654 6 rev. 1.5, 20-dec-07 ild621/ild621gb/ilq621/ilq621gb vishay semiconductors optocoupler, phototransistor output (dual, quad channel) fig. 11 - maximum detector power dissipation fig. 12 - maximum collector current vs. collector voltage fig. 13 - normalization factor for non-saturated and saturated ctr vs. i f fig. 14 - normalization factor for non-saturated and saturated ctr vs. i f fig. 15 - normalization factor for non-saturated and saturated ctr vs. i f iild621_11 - 60 - 40 - 20 0 20 40 60 8 0 100 0 50 100 150 200 t am b - am b ient temperat u re (c) p det - detector po w er (m w ) iild621_12 0.1 10 100 1000 100 10 1 0.1 v ce - collector emitter v oltage ( v ) i ce - collector c u rrent (ma) 25 c 50 c 75 c 90 c 1 rth = 500 c / w iild621_13 ctr n f - n ormali u ed ctr factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctrce t a = 50 c n ormalized to: v ce = 10 v ,i f = 5 ma, ctrce(sat) v ce = 0.4 v n ctrce(sat) iild621_14 ctr n f - n ormalized ctr factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctrce t a = 70 c n ormalized to: v ce = 10 v ,i f = 5 ma, ctrce(sat) v ce = 0.4 v n ctrce(sat) iild621_15 ctr n f - n ormalized ctr factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctrce t a = 100 c n ormalized to: v ce = 10 v ,i f = 5 ma, ctrce(sat) v ce = 0.4 v n ctrce(sat)
document number: 83654 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 7 ild621/ild621gb/ilq621/ilq621gb optocoupler, phototransistor output (dual, quad channel) vishay semiconductors package dimensions in inches (millimeters ) i17 8 006 pin one id 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) typ. 10 3 to 9 0.300 (7.62) typ. 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 0.230 (5. 8 4) 0.250 (6.35) 4 3 2 1 0.031 (0.79) 0.050 (1.27) 5 6 7 8 iso method a 0.255 (6.4 8 ) 0.265 (6. 8 1) 0.779 (19.77) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 4 0.100 (2.54) typ. 10 typ. 3 to 9 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) pin one id 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 0.031 (0.79) 0.300 (7.62) typ. 0.230 (5. 8 4) 0.250 (6.35) 0.050 (1.27) i17 8 007 iso method a
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83654 8 rev. 1.5, 20-dec-07 ild621/ild621gb/ilq621/ilq621gb vishay semiconductors optocoupler, phototransistor output (dual, quad channel) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) min. option 7 1 8 450
document number: 83654 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 9 ild621/ild621gb/ilq621/ilq621gb optocoupler, phototransistor output (dual, quad channel) vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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